AT28C040 Datasheet, PDF (1/12 Pages) ATMEL Corporation – 4-Megabit 512K x 8 Paged E2PROM

Features
• Read Access Time - 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 256 Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 256 Byte Page Write Operation
• Low Power Dissipation
– 80 mA Active Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout
Description
The AT28C040 is a high-performance electrically erasable and programmable read
only memory (E²PROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 440 mW.
(continued)
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
LCC
Top View
SIDE BRAZE,
FLATPACK
Top View
4-Megabit
(512K x 8)
Paged E²PROM
AT28C040
AT28C040 4-
Megabit (512K x
8) Paged
E²PROM
Rev. 0542B–04/98
1