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AT28C010_14 Datasheet, PDF (1/17 Pages) ATMEL Corporation – Automatic Page Write Operation | |||
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Features
⢠Fast Read Access Time - 120 ns
⢠Automatic Page Write Operation
â Internal Address and Data Latches for 128-Bytes
â Internal Control Timer
⢠Fast Write Cycle Time
â Page Write Cycle Time - 10 ms Maximum
â 1 to 128-Byte Page Write Operation
⢠Low Power Dissipation
â 80 mA Active Current
â 300ï µA CMOS Standby Current
⢠Hardware and Software Data Protection
⢠DATA Polling for End of Write Detection
⢠High Reliability CMOS Technology
â Endurance: 104 or 105 Cycles
â Data Retention: 10 Years
⢠Single 5V ï± 10% Supply
⢠CMOS and TTL Compatible Inputs and Outputs
⢠JEDEC Approved Byte-Wide Pinout
AT28C010 Mil
1-Megabit
(128K x 8)
Paged Parallel
EEPROMs
AT28C010
Military
Pin Configuration
Pin Name
Function
A0 - A16
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
CERDIP, FLATPACK
Top View
44 LCC
Top View
NC 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
GND 16
32 VCC
31 WE
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A12 7
A7 8
A6 9
A5 10
NC 11
NC 12
NC 13
A4 14
A3 15
A2 16
A1 17
(continued)
32 LCC
Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
39 A13
38 A8
37 A9
36 A11
35 NC
34 NC
33 NC
32 NC
31 OE
30 A10
29 CE
PGA
Top View
0010FâPEEPRâ062014
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