AT28C010_09 Datasheet, PDF (1/16 Pages) ATMEL Corporation – 1-Megabit (128K x 8) Paged Parallel EEPROMs

Features
• Fast Read Access Time - 120 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 128-Byte Page Write Operation
• Low Power Dissipation
– 80 mA Active Current
– 300 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 10⁴ or 10⁵ Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout
AT28C010 Mil
1-Megabit
(128K x 8)
Paged Parallel
EEPROMs
AT28C010
Military
Pin Configuration
Pin Name Function
A0 - A16 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
CERDIP, FLATPACK
Top View
NC 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
GND 16
32 VCC
31 WE
30 NC
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A12 7
A7 8
A6 9
A5 10
NC 11
NC 12
NC 13
A4 14
A3 15
A2 16
A1 17
44 LCC
Top View
(continued)
32 LCC
Top View
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
39 A13
38 A8
37 A9
36 A11
35 NC
34 NC
33 NC
32 NC
31 OE
30 A10
29 CE
PGA
Top View
0010D–PEEPR–7/09