AT28C010 Datasheet, PDF (1/11 Pages) ATMEL Corporation – 1 Megabit 128K x 8 Paged CMOS E2PROM

AT28C010 Mil
Features
Fast Read Access Time - 120 ns
•• Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
• Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
• Low Power Dissipation
80 mA Active Current
300 µA CMOS Standby Current
Hardware and Software Data Protection
• _{DATA Polling for End of Write Detection}
•• _{High Reliability CMOS Technology}
Endurance: 10⁴ or 10⁵ Cycles
Data Retention: 10 Years
• Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
•• _{JEDEC Approved Byte-Wide Pinout}
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
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Pin Configurations
44 LCC
Pin Name Function
Top View
A0 - A16
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC
No Connect
1 Megabit
(128K x 8)
Paged
CMOS
E²PROM
Military
AT28C010 Mil
PGA
Top View
CERDIP, FLATPACK
Top View
32 LCC
Top View
0353C
2-243