AT28BV16 Datasheet, PDF (1/8 Pages) ATMEL Corporation – 16K 2K x 8 Battery-Voltage CMOS E2PROM

AT28BV16
Features
• 2.7 to 3.6V Supply
Full Read and Write Operation
• Low Power Dissipation
8 mA Active Current
50 µA CMOS Standby Current
Read Access Time - 250 ns
• _{Byte Write - 3 ms}
•• _{Direct Microprocessor Control}
DATA Polling
READ/BUSY Open Drain Output on TSOP
• High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
Low Voltage CMOS Compatible Inputs and Outputs
• _{JEDEC Approved Byte Wide Pinout}
•• _{Commercial and Industrial Temperature Ranges}
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28BV16 is a 16K mem-
ory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s
reliable nonvolatile CMOS technology.
The AT28BV16 is accessed like a static RAM for the read or write cycles without the
need of external components. During a byte write, the address and data are latched
Pin Configurations
(continued)
Pin Name
A0 - A10
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
TSOP
Top View
16K (2K x 8)
Battery-Voltage^™
CMOS
E²PROM
AT28BV16
PDIP, SOIC
Top View
PLCC
Top View
0308A
2-119