AT26F004_06 Datasheet, PDF (1/38 Pages) ATMEL Corporation – 4-megabit 2.7-volt Only Serial Firmware DataFlash Memory

Features
• Single 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
• 33 MHz Maximum Clock Frequency
• Flexible, Uniform Erase Architecture
– 4-Kbyte Blocks
– 32-Kbyte Blocks
– 64-Kbyte Blocks
– Full Chip Erase
• Optimized Physical Sectoring for Code Shadowing and Code + Data Storage
Applications
– One 16-Kbyte Top Boot Sector
– Two 8-Kbyte Sectors
– One 32-Kbyte Sector
– Seven 64-Kbyte Sectors
• Individual Sector Protection for Program/Erase Protection
• Hardware Controlled Locking of Protected Sectors
• Byte Program Architecture with Sequential Byte Program Mode Capability
– Sequential Byte Program Mode Improves Throughput for
Programming Multiple Bytes
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
– 7 mA Active Read Current (Typical)
– 15 µA Deep Power-down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC
– 8-lead MLF
4-megabit
2.7-volt Only
Serial Firmware
DataFlash^®
Memory
AT26F004
1. Description
The AT26F004 is a serial interface Flash memory device designed for use in a wide
variety of high-volume consumer based applications in which program code is shad-
owed from Flash memory into embedded or external RAM for execution. The flexible
erase architecture of the AT26F004, with its erase granularity as small as 4 Kbytes,
makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.
The physical sectoring and the erase block sizes of the AT26F004 have been opti-
mized to meet the needs of today's code and data storage applications. By optimizing
the size of the physical sectors and erase blocks, the memory space can be used
much more efficiently. Because certain code modules and data storage segments
must reside by themselves in their own protected sectors, the wasted and unused
memory space that occurs with large sectored and large block erase Flash memory
devices can be greatly reduced. This increased memory space efficiency allows addi-
tional code routines and data storage segments to be added while still maintaining the
same overall device density.
3588C–DFLASH–04/06