HHV0405-175 Datasheet, PDF (3/8 Pages) Advanced Semiconductor – 175 Watts, 50V, 420-470MHz, 300us, 10% Duty Cycle

H V V0405-175 H igh Voltage, H igh Ruggedness
U H F Pulsed Power Transistor
420-470 MHz, 300µs Pulse, 10% Duty Cycle
For U H F band, Weather and Long Range Radar Applications
Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width
and 10% duty cycle with V_DD = 50V and I_DQ = 50mA. The device was measured at 450MHz.
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Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width
and 10% duty cycle with V_DD = 50V and I_DQ = 50mA. The device was measured at 450MHz.