ULBM5_07 Datasheet, PDF (2/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ERROR! REFERENCE SOURCE N_UOT_LF_BO_MUN₅D.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
C_ob
V_CB = 12 V
f = 1.0 MHz
P_G
V_CC = 12.5 V
P_IN = 0.70 W
P_OUT = 5.0 W
f = 470 MHz
MINIMUM
---
8.5
TYPICAL MAXIMUM
19
---
UNITS
pF
dB
IMPEDANCE DATA
FREQ
450
470
512
Z_IN (Ω)
1.4 + j2.0
1.4 + j2.9
1.5 + j3.4
Z_CL (Ω)
10.4 – j6.9
11.4 + j5.8
11.9 + j3.2
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
2/2