VMB100-12 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VMB100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB100-12 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
20 A
V_CBO
36 V
V_CEO
18 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
270 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.65 ^OC/W
PACKAGE STYLE .500 6L FLG
C
A
2x ØN
FULL R
D
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
B
E
.725/18,42
G
F
H
MINIMUM
inches / mm
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
JI
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
M
K
L
MAXIMUM
inches / mm
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
ORDER CODE: ASI10747
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CES
I_C = 100 mA
BV_CEO
I_C = 100 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 15 V
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
15
20
---
UNITS
V
V
V
V
mA
---
C_OB
V_CB = 12.5 V
MHz
f = 1.0
400
pF
P_G
V_CE = 12.5 V
P_OUT = 100 W
f = 88 MHz
10
dB
η_C
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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