VLB100-12 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VLB100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VLB100-12 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
20 A
V_CBO
36 V
V_CEO
18 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
270 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.65 ^OC/W
PACKAGE STYLE .500 4L FLG
A
FULL R
C
B
.112x45°
L
Ø.125 NOM.
E
H
D
GF
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10740
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CES
I_C = 100 mA
BVCEO I_C = 100 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 12.5 V
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
15
20
---
UNITS
V
V
V
V
mA
---
C_OB
V_CB = 12.5 V
f = 1.0 MHz
400
pF
P_G
V_CC = 12.5 V
P_OUT = 100 W
f = 50 MHz
7.0
dB
η_C
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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