VLB10-12S Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VLB10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VLB10-12S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2.0 A
V_CBO
36 V
V_CEO
18 V
V_CES
36 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
20 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
5.0 ^OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
ØC
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10734
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 15 mA
BV_CES
I_C = 50 mA
BV_EBO
I_E = 2.5 mA
I_CBO
V_CB = 12.5 V
h_FE
V_CE = 5.0 V
I_C = 250 mA
MINIMUM TYPICAL MAXIMUM
18
36
4.0
1.0
5.0
200
UNITS
V
V
V
mA
---
C_OB
V_CB = 12.5 V
f = 1.0 MHz
65
pF
P_G
V_CC = 12.5 V
P_OUT = 10 W
f = 50 MHz
10
dB
η_C
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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