VHB50-28S Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VHB50-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB50-28S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
6.5 A
V_CBO
65 V
V_CEO
35 V
V_EBO
4.0 V
P_DISS
T_J
T_STG
θ_JC
75 W
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
2.3 ^OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
ØC
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10730
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
MINIMUM
BV_CEO
I_C = 200 mA
35
BV_CES
I_C = 200 mA
65
BV_EBO
I_E = 10 mA
4.0
I_CBO
I_CES
V_CB = 28 V
V_CE = 28 V
T_C = 125 ^OC
h_FE
V_CE = 5.0 V
I_C = 500 mA
5.0
TYPICAL
MAXIMUM
2.0
10
---
UNITS
V
V
V
mA
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
80
pF
f_T
V_CE = 10 V
I_C = 500 mA
f = 100 MHz 200
P_G
V_CE = 28 V
P_OUT = 50 W
f = 150 MHz
6.0
η_C
60
MHz
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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