VHB25-28S_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VHB25-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB25-28S is an NPN
power transistor, designed 108-175
MHz applications. The device utilizes
diffused emitter resistors to achieve
good VSWR capability
FEATURES:
• Common Emitter-Class-C
• P_G = 10 dB at 30 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
4.0 A
V_CBO
36 V
V_CEO
18 V
V_EBO
4.0 V
P_DISS
40 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
4.4 °C/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
C
E
E
ØC
B
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
M IN IM U M
inches / mm
A
.220 / 5.59
B
.980 / 24.89
C
.370 / 9.40
D
.004 / 0.10
E
.320 / 8.13
F
.100 / 2.54
G
.450 / 11.43
H
.090 / 2.29
I
.155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10725
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 200 mA
BV_CES
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
35
---
UNITS
V
V
V
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
250
pF
P_G
V_CC = 28 V
η_C
P_OUT = 25 W
f = 175 MHz
8.5
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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