VHB25-28F_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VHB25-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB25-28F is an NPN
power transistor, designed for 108-175
MHZ applications. The device utilizes
diffused emitter resistor to achieve
good VSWR capability.
FEATURES:
• Common Emitter – Class-C
• P_G = 10 dB at 30 W/150 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
4.0 A
V_CBO
65 V
V_EBO
4.0 V
V_CEO
35 V
P_DISS
40 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
4.4 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
E
C
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10724
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 200 mA
BV_CES
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CBO
V_BE = 30 V
h_FE
V_CE = 5.0 V
I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
35.0
---
UNITS
V
V
V
mA
---
C_ob
V_CB = 28 V
f = 1.0 MHz
250
pF
f_T
V_CE = 28 V
I_C = 200 mA
f = 100 MHz
50
P_G
V_CC = 28 V
η_C
P_OUT = 25 W
f = 175 MHz
8.5
60
MHz
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
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