VHB125-28_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VHB125-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB125-28 is NPN RF
power transistor designed primarily for
VHF communications. It utilizes
Emitter ballasting to provide high
VSWR handling capability.
FEATURES:
• CE configuration, 28 V operation
• Internal Input Matching Network
• P_G = 9.2 dB at 125 W/175 MHz
• Omnigold™ Metalization System
• High VSWR capability
MAXIMUM RATINGS
I_C
20 A
V_CBO
65 V
V_CEO
36 V
V_CES
65 V
V_EBO
4.0 V
P_DISS
270 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.65 °C/W
PACKAGE STYLE .500 6L FLG
C
A
21
D
2x ØN
FULL R
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
34
B
E
.725/18,42
G
F
H
M IN IM U M
inches / mm
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
JI
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
M
K
L
M AX IM U M
inches / mm
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
ORDER CODE: ASI10731
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 100 mA
BV_CES
I_C = 100 mA
BV_CEO
I_C = 100 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 30 V
h_FE
V_CE = 5.0 V
I_C = 5.0 A
MINIMUM TYPICAL MAXIMUM
65
65
35
4.0
15
20
200
UNITS
V
V
V
mA
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REV. C
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Specifications are subject to change without notice.