VHB100-12_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VHB100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB100-12 is a Class-C,
12.5 V epitaxial silicon NPN transistor.
Designed primarily for VHF, FM
communication, Diffused ballast
resistor gives it high VSWR capability,
good gain & efficiency over the 136-
175 MHz band.
FEATURES:
• 175 MHz 12.5 V
• Internal Input Matching Network
• P_G = 6.0 dB at 100 W/175 MHz
• Omnigold™ Metalization System
• Common Emitter configuration
MAXIMUM RATINGS
I_C
20 A
V_CBO
36 V
V_CEO
18 V
V_CES
36 V
V_EBO
4.0 V
P_DISS
270 W @ T_C = 25 °C
T_J
-65 °C to +200 ° C
T_STG
-65 °C to +150 °C
θ_JC
0.65 °C/W
PACKAGE STYLE .500 6L FLG
C
A
3
1
2x ØN
FULL R
D
24
B
E
.725/18,42
G
F
H
JI
M
K
L
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
MAXIMUM
inches / mm
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
1 = Collecttor 2 = Base 3&4 = Emitter
ORDER CODE: ASI10719
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CES
I_C = 100 mA
BV_CBO
I_C = 50 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 12.5 V
MINIMUM TYPICAL MAXIMUM
18
36
36
4.0
15
UNITS
V
V
V
V
mA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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