VHB10-28F Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VHB10-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB10-28F is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
1.0 A
V_CBO
65 V
V_CEO
35 V
V_CES
65 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
13.0 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
5.5 ^OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
Ø.125 NOM.
FULL R
J
.125
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10721
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 200 mA
BV_CES
I_C = 200 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 200 mA
MINIMUM TYPICAL MAXIMUM
65
65
35
4.0
1.0
5.0
---
UNITS
V
V
V
V
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
15
pF
P_G
V_CC = 28 V
P_OUT = 10 W
f = 175 MHz
10
dB
η_C
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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