VHB1-28T Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VHB1-28T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB1-28T is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
0.4 A
V_CBO
55 V
V_CEO
30 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
3.5 V
5 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
35 ^OC/W
PACKAGE STYLE TO-39
B
ØA
C
45°
ØD
E
F
G
H
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.200 / 5.080
B
.029 / 0.740
.045 / 1.140
C
.028 / 0.720
.034 / 0.860
D
.335 / 8.510
.370 / 9.370
E
.305 / 7.750
.335 / 8.500
F
.240 / 6.100
.260 / 6.600
G
.500 / 12.700
H
.016 / 0.407
.020 / 0.508
ORDER CODE: ASI10720
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CER
I_C = 5.0 mA
R_BE = 10 Ω
BV_CBO
I_C = 0.1 mA
BV_EBO
I_E = 0.1 mA
I_CEX
V_C = 55 V
V_BE = -1.5 V
I_CEO
V_CE(S)
V_E = 28 V
I_C = 100 mA
I_B = 20 mA
h_FE
V_CE = 5.0 V
I_C = 50 mA
I_C = 360 mA
MINIMUM TYPICAL MAXIMUM
30
55
55
3.5
100
20
1.0
10
200
5.0
C_OB
V_CB = 28 V
f = 1.0 MHz
3.0
P_G
V_CE = 28 V
P_OUT = 1.0 W
f = 175 MHz
13
η
60
UNITS
V
V
V
V
µA
µA
V
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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