VHB1-12T_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

VHB1-12T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB1-12T is Designed for
Class C, 12.5 V High Band Applications
up to 175 MHz.
FEATURES:
• Class C Operation
• P_G = 10 dB at 1.0 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
400 mA (MAX)
V_CBO
40 V
V_CEO
20 V
V_CER
40 V
V_EBO
2.0 V
P_DISS
3.5 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
20 °C/W
PACKAGE STYLE TO-39
B
ØA
C
45°
ØD
E
F
G
H
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.200 / 5.080
B
.029 / 0.740
.045 / 1.140
C
.028 / 0.720
.034 / 0.860
D
.335 / 8.510
.370 / 9.370
E
.305 / 7.750
.335 / 8.500
F
.240 / 6.100
.260 / 6.600
G
.500 / 12.700
H
.016 / 0.407
.020 / 0.508
ORDER CODE: ASI10711
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 5.0 mA
BV_CER
I_C = 5.0 mA
R_BE = 10 Ω
BV_EBO
I_E = 100 µA
I_CEO
V_CE = 12 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
V_CE(SAT)
I_C = 100 mA
I_B = 20 mA
MINIMUM TYPICAL MAXIMUM
20
40
2.0
0.2
10
200
0.5
UNITS
V
V
V
mA
---
Vdc
C_OB
V_CB = 12.5 V
f = 1.0 MHz
4.0
pF
P_G
V_CE = 12.5 V
P_OUT = 1.0 W
f = 175 MHz
10
η_C
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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