VFT5-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – VHF POWER MOSFET N-Channel Enhancement Mode

VFT5-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI VFT5-28 is a N-Channel
Enhancement-Mode RF Power
MOSFET Designed for AM and FM
Power Amplifier Applications up to 250
MHz.
FEATURES INCLUDE:
• P_G = 14 dB Typical at 175 MHz
• 30:1 Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
1.0 A
V_DSS
60 V
V_GS
P_DISS
T_J
T _STG
θ _JC
±40 V
17.5 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
10 ^OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
S
D
Ø.125 NOM.
FULL R
J
.125
G
S
C
D
F
E
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ASI ORDER CODE: ASI10701
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_DSS
I_DSS
I_GSS
V_GS(th)
g_fs
I_D = 5 mA
V_DS = 28 V
V_DS = 0 V
I_D = 25 mA
I_D = 250 mA
V_GS = 0 V
V_GS = 20 V
V_DS = 10 V
V_DS = 10 V
C_iss
C_oss
C_rss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
P_G
V_DD = 50 V
I_DQ = 50 mA
η_D
F = 175 MHz
P_out = 5.0 W
ψ
V_SWR = 30:1 AT ALL PHASE ANGLES
MINIMUM
60
1.0
80
NONE
TYPICAL MAXIMUM UNITS
V
1.0
mA
1.0
µA
6.0
V
mS
9.0
7.0
pF
1.0
13
14
dB
50
60
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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