VFT45-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – VHF POWER MOSFET N-Channel Enhancement Mode

VFT45-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The VFT80-28 is Designed for
General Purpose Class B Power
Amplifier Applications up to 175 MHz.
PACKAGE STYLE .380 4L FLG
FEATURES:
• P_G = 10 dB Typical at 175 MHz
• 30:1 Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
7.0 A
V_(BR)DSS
60 V
V_DGR
60 V
V_GS
P_DISS
T_J
T _STG
θ _JC
± 20 V
100 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
1.8 ^OC/W
.112 x 45°
B
A
S
D
Ø.125 NOM.
FULL R
J
.125
G
S
C
D
F
E
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10704
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 100 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
I_D = 25 mA
V_DS = 10 V
g_fs
I_D = 1 A
V_DS = 10 V
MINIMUM
60
1.0
700
NONE
TYPICAL MAXIMUM
5.0
1.0
6.0
UNITS
V
mA
µA
V
mS
C_iss
52
C_oss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
87
pF
C_rss
8
P_G
V_DD = 28 V
I_DQ = 25 mA
P_out = 45 W
12
15
dB
η_D
F = 175 MHz
50
60
%
ψ
V_SWR = 30:1 AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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