VFT300-50 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – VHF POWER MOSFET N-Channel Enhancement Mode

VFT300-50
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The VFT300-50 is Designed for
AM/FM Power Amplifier Applications up
to 250 MHz.
FEATURES:
• P_G = 15 dB Typ. at 300W/ 175 MHz
• 5:1 Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
40 A
V_DSS
125 V
V_GS
P_DISS
T_J
T _STG
θ _JC
± 40 V
500 W @ T_C = 25 ^OC
-65 ^OC to +150 ^OC
-65 ^OC to +200 ^OC
0.35 ^OC/W
PACKAGE STYLE .400 BAL FLG(D)
.080x45°
.1925
E
DC
I
A
B
D
D
G
G
F
G
H
N
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.210 / 5.33
C
.125 / 3.18
D
.380 / 9.65
E
.580 / 14.73
F
.435 / 11.05
G
1.090 / 27.69
H
1.335 / 33.91
I
.003 / 0.08
J
.060 / 1.52
K
.100 / 2.54
L
M
.395 / 10.03
N
.850 / 21.59
FULL R
(4X).060 R
M
Source connected to flange
L
J
K
MAXIMUM
inches / mm
.230 / 5.84
.390 / 9.91
.620 / 15.75
1.105 / 28.07
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.115 / 2.92
.230 / 5.84
.407 / 10.34
.870 / 22.10
ORDER CODE: ASI10710
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_DSS
I_DSS
I_GSS
V_GS(th)
g_fs
I_D = 50 mA
V_DS = 50 V
V_DS = 0 V
I_D = 100 mA
I_D = 5.0 A
V_GS = 0 V
V_GS = 20 V
V_DS = 10 V
V_DS = 10 V
C_iss
C_oss
C_rss
V_DS = 50 V
V_GS = 0 V
f = 1.0 MHz
P_G
V_DD = 50 V
I_DQ = 500 mA
η_D
f = 175 MHz
P_out = 300 W
ψ
V_SWR = 5:1 AT ALL PHASE ANGLES
MINIMUM
125
1.0
3,000
TYPICAL MAXIMUM
5.0
1.0
5.0
UNITS
V
mA
µA
V
mS
350
250
pF
20
14
15
dB
60
65
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without ntoice.
REV. A
1/1