VFT300-28_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – VHF POWER MOSFET

VFT300-28
VHF POWER MOSFET
Silicon N-Channel Enhancement Mode
DESCRIPTION:
The VFT300-28 is Designed for
Wideband High Power VHF Amplifier
Applications operating up to 250 MHz.
FEATURES:
• P_G = 14 dB Typical at 175 MHz
• η_D = 55% Typ. at P_OUT = 300 Watts
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
16 A
V_(BR)DSS
65 V
V_DGR
65 V
V_GS
± 40 V
P_DISS
500 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.35 °C/W
PACKAGE STYLE .400 BAL FLG (D)
A
.080x45°
B
FULL R
(4X).060 R
.1925
E
M
D
C
F
G
H
N
I
L
J
K
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.210 / 5.33
C
.125 / 3.18
D
.380 / 9.65
.390 / 9.91
E
.580 / 14.73
.620 / 15.75
F
.435 / 11.05
G
1.090 / 27.69
1.105 / 28.07
H
1.335 / 33.91
1.345 / 34.16
I
.003 / 0.08
.007 / 0.18
J
.060 / 1.52
.070 / 1.78
K
.100 / 2.54
.115 / 2.92
L
.230 / 5.84
M
.395 / 10.03
.407 / 10.34
N
.850 / 21.59
.870 / 22.10
ORDER CODE: ASI10707
CHARACTERISTICS T_C = 25 °C
SYMBOL
NONETEST CONDITIONS
V_(BR)DSS
V_GS = 0 V
I_DS = 100 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS
V_DS = 10 V
I_D = 100 mA
V_DS
V_GS = 10 V
I_D = 10 A
G_FS
V_DS = 10 V
I_D = 5 A
MINIMUM TYPICAL MAXIMUM
65
5.0
1.0
1.0
5.0
1.5
3500
UNITS
V
mA
µA
V
V
mS
C_iss
375
C_oss
V_GS = 28 V
V_DS = 0 V
F = 1.0 MHz
188
pF
C_rss
26
G_PS
V_DD = 28 V
I_DQ = 2 x 250 mA P_OUT = 300 W
12
14
dB
η_D
f = 175 MHz
50
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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