VFT150-50_07 Datasheet, PDF (1/3 Pages) Advanced Semiconductor – VHF POWER MOSFET

VFT150-50
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The ASI VFT150-50 is a gold
metallized N-Channel Enhancement
mode MOSFET intended for use in 50
Vdc large signal output to 200 MHz.
FEATURES:
• P_G = 13.0 dB Typ. at 175 MHz/150 W
• CS configuration; 50 Vdc operation
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
16 A
V_DSS
125 V
V_GS
P_DISS
T_J
T_STG
θ_JC
± 30 V
300 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.6 ^OC/W
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FULL R
S
D
C
B
G
S
E
H
D
G
F
Ø.125 NOM.
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
E
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
K
.280 / 7.11
L
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10709
CHARACTERISTICS TC = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 50 mA
I_DSS
V_DS = 50 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS
V_DS = 10 V
I_D = 100 mA
g_fs
V_DS = 10 V
I_D = 5 A
C_iss
C_oss
C_rss
P_G
η_D
V_DS = 50 V
V_GS = 0 V
V_DD = 50 V
I_DQ = 250 mA
P_out = 150 W (PEP) P_IN = 6.0 W
f = 1.0 MHz
f = 175 MHz
MINIMUM
125
1.0
3.0
NONE
TYPICAL MAXIMUM
5.0
1.0
5.0
UNITS
V
mA
µA
V
mho
290
130
pF
28
13.0
dB
45
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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