VFT150-28_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – VHF POWER MOSFET

VFT150-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The VFT150-28 is a gold metallized
N-Channel enhancement mode
MOSFET, intended for use in 28 VDC
large signal applications to 175 MHz.
FEATURES:
• P_G = 10 dB Typical at 175 MHz
• No thermal Runaway
• Omnigold™ Metalization System
• Class-A or AB
MAXIMUM RATINGS
I_D
16 A
V_DSS
65 V
V_GS
±40 V
V_DGR
65 V
P_DISS
300 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.6 °C/W
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
S
FULL R
D
Ø.125 NOM.
C
B
E
H
G
S
D
GF
K
IJ
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M IN IM U M
inches / mm
.220 / 5.59
.245 / 6.22
.720 / 18.28
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.125 / 3.18
.125 / 3.18
M A X IM U M
inches / mm
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI 10700
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BV_DSS
I_DS = 100 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
I_D = 100 mA V_DS = 10 V
g_fs
I_D = 5 A
V_DS = 10 V
C_iss
C_oss
C_rss
P_G
η_D
V_DS = 28 V
V_DD = 28 V
P_IN = 15 W
V_GS = 0 V
I_DQ = 250 mA
f = 1.0 MHz
P_out = 150 W
f = 175 MHz
MINIMUM
60
1.0
3.5
NONE
TYPICAL MAXIMUM
5.0
1.0
5.0
375
188
26
8.5
10
50
60
UNITS
V
mA
µA
V
mho
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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