VFT150-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – VHF POWER MOSFET Channel Enhancement Mode

VFT150-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The VFT150-28 is Designed for General
Purpose Class B Power Amplifier
Applications up to 175 MHz.
FEATURES:
• P_G = 10 dB Typical at 175 MHz
• 10:1 Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
16 A
V_DSS
65 V
V_GS
P_DISS
T_J
T _STG
θ _JC
±40 V
300 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.6 ^OC/W
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FULL R
S
D
C
B
E
H
G
S
D
GF
Ø.125 NOM.
K
IJ
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MINIMUM
inches / mm
.220 / 5.59
.245 / 6.22
.720 / 18.28
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.125 / 3.18
.125 / 3.18
MAXIMUM
inches / mm
.230 / 5.84
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
ORDER CODE: ASI 10700
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_DSS
I_D = 100 mA
I_DSS
V_DS = 28 V
V_GS = 0 V
I_GSS
V_DS = 0 V
V_GS = 20 V
V_GS(th)
I_D = 100 mA V_DS = 10 V
g_fs
I_D = 5 A
V_DS = 10 V
MINIMUM
60
1.0
3500
NONE
TYPICAL MAXIMUM
5.0
1.0
5.0
UNITS
V
mA
µA
V
mS
C_iss
375
C_oss
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
190
pF
C_rss
25
P_G
V_DD = 28 V
I_DQ = 250 mA
P_out = 150 W
8.5
10
dB
η_D
f = 175 MHz
50
60
%
ψ
V_SWR = 10:1 AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1