UTV200 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

UTV200
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UTV200 is Designed for
Class A. UHF Television Applications
up to 860 MHz.
FEATURES INCLUDE:
• Internal Input Matching
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
4.5 A
V_CE
P_DISS
T_J
T_STG
θ_JC
28 V
80 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +200 ^OC
1.2 ^OC/W
PACKAGE STYLE .420 4L FLG.
1 = COLLECTOR 2 = EMITTER
3 = BASE
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 40 mA
BV_CES
I_C = 20 mA
BV_EBO
I_E = 10 mA
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
C_ob
V_CB = 26 V
f = 1.0 MHz
P_G
VSRW
V_CE = 26 V
MHz
P_OUT = 20 W
f = 470 - 860
MINIMUM TYPICAL MAXIMUM
28
50
4.0
50
10
150
UNITS
V
V
V
mA
---
36
pF
8.5
9.5
dB
3:1
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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