UML125B Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

UML125B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The UML125B is Designed for Class
A, B and C Power Amplifiers Operating
in the 100 to 500 MHz Military Band.
FEATURES:
• P_G = 7.0 dB Min. at 125 W/400 MHz
• Input Matching Networks
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
15 A
V_CBO
60 V
V_CEO
33 V
V_EBO
P_DISS
T_J
T _STG
θ _JC
4.0 V
260 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.67 ^OC/W
PACKAGE STYLE .400 8L FLG
Emitter - 4
G
F
E
.1925
.125
K
C
D
B
A
Collector- 2 places
FULL R
O
H
4 x .060 R
I
J
Base – 2 places
N
LM
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.030 / 0.76
B
.115 / 2.92
.125 / 3.18
C
.360 / 9.14
D
.065 / 1.65
.075 / 1.91
E
.130 / 3.30
F
.380 / 9.65
G
.735 / 18.67
.390 / 9.91
.765 / 19.43
H
.645 / 16.38
.655 / 16.64
I
.895 / 22.73
J
.420 / 10.67
.905 / 22.99
.430 / 10.92
K
.003 / 0.08
.007 / 0.18
L
.120 / 3.05
M
.159 / 4.04
.130 / 3.30
.175 / 4.45
N
.280 / 7.11
O
.395 / 10.03
.405 / 10.29
ORDER CODE: ASI10699
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
BV_CBO
I_C = 100 mA
60
---
---
BV_CES
I_C = 80 mA
60
---
---
BV_CEO
I_C = 50 mA
33
---
---
BV_EBO
I_E = 20 mA
4.0
---
---
I_CBO
V_CB = 30 V
---
10
h_FE
V_CE = 5.0 V
I_C = 1.0 A
20
---
---
G_P
η_C
V_CE = 28 V
P_OUT = 125 W
7.0
f = 400 MHz
60
G_P
η_C
V_CE = 28 V
P_OUT = 100 W
5.5
f = 500 MHz
55
UNITS
V
V
V
V
mA
---
dB
%
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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