ULBM5SL Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ULBM5SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM5SL is Designed for
Class C, FM Land Mobile Applications
up to 470 MHz.
FEATURES:
• Common Emitter
• P_G = 8.5 dB at 5.0 W/470 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
1.7 A
V_CBO
36 V
V_CER
16 V
V_CES
36 V
V_EBO
4.0 V
P_DISS
15 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
12 °C/W
PACKAGE STYLE .280 4L PILL
C
E
E
B
ORDER CODE: ASI10681
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 10 mA
BV_EBO
I_E = 2.0 mA
I_CER
V_CE = 10 V
R_BE = 50 Ω
I_CBO
V_CB = 15 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
16
36
4.0
0.5
1.0
10
100
UNITS
V
V
V
mA
mA
---
C_ob
V_CB = 7.5 V
f = 1.0 MHz
22
pF
P_G
V_CC = 7.5 V
P_OUT = 5.0 W
η_C
f = 470 MHz
8.5
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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