ULBM35_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ULBM35
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM35 is Designed for
Class C, FM Land Mobile Applications
up to 470 MHz.
FEATURES:
• Internal Input matching Network
• P_G = 6.0 dB at 35 W/470 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
8.0 A
V_CBO
36 V
V_CEO
16 V
V_EBO
4.0 V
P_DISS
117 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.5 °C/W
PACKAGE STYLE .500 6L FLG
C
A
2x ØN
FULL R
D
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
B
E
.7 2 5 /1 8 ,4 2
G
F
H
M IN IM U M
inches / mm
.150 / 3.43
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.970 / 24.64
.090 / 2.29
.150 / 3.81
JI
.045 / 1.14
.125 / 3.18
.725 / 18.42
.120 / 3.05
M
K
L
M A X IM U M
inches / mm
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
ORDER CODE: ASI10684
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 15 mA
BV_EBO
I_E = 5.0 mA
I_CES
V_CE = 12.5 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
16
36
4.0
5.0
20
---
UNITS
V
V
V
mA
---
C_ob
V_CB = 12.5 V
f = 1.0 MHz
110
pF
P_G
V_CC = 12.5 V
P_OUT = 35 W
η_C
f = 470 MHz
6.0
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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