ULBM2TE Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ULBM2TE
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM2TE is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
0.40 A
V_CBO
36 V
V_CEO
16 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
5 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
35 ^OC/W
PACKAGE STYLE TO-39GE
B
C
ØA
45°
ØD
E
F
G
H
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.200 / 5.080
B
.029 / 0.740
.045 / 1.140
C
.028 / 0.720
.034 / 0.860
D
.355 / 9.020
.370 / 9.370
E
.315 / 8.010
.335 / 8.500
F
.165 / 4.200
.180 / 4.570
G
.500 / 12.700
.750 / 19.050
H
.016 / 0.410
.020 / 0.508
ORDER CODE: ASI10679
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 50 mA
BV_CES
I_C = 50 mA
R_BE = 10 Ω
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 15 V
h_FE
V_CE = 5.0 V
I_C = 50 mA
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
20
200
UNITS
V
V
V
mA
---
C_ob
V_CB = 12.5 V
f = 1.0 MHz
10
pF
P_G
V_CE = 12.5 V
P_OUT = 2.0 W
f = 470 MHz
8.0
dB
η_C
55
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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