ULBM10_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ULBM10
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM10 is a gold metallized
RF power transistor designed for 12.5
V, Class-C application in 450-512 MHz
frequency range. It utilizes emitter
ballasting for high reliability and
ruggedness.
FEATURES:
• Common Emitter, Class-C 12.5 V
• P_G = 7.0 dB at 10 W/470 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2.5 A
V_CBO
36 V
V_CEO
16 V
V_CES
36 V
V_EBO
4.0 V
P_DISS
58 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
3.0 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
C
B^E
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10682
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 20 mA
BV_CES
I_C = 25 mA
BV_EBO
I_E = 10 mA
I_CEO
V_CB = 15 V
I_CES
V_CE = 10 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
16
36
4.0
2.0
3.0
10
150
UNITS
V
V
V
mA
mA
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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