ULBM05 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

ULBM0.5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM0.5 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
0.4 A
V_CBO
28 V
V_CEO
12 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
2.5 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
70 ^OC/W
PACKAGE STYLE .205 4L PILL
D
B
G
H
A
C
F
E
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.976 / 24.800
1.00 / 25.400
B
.976 / 24.800
1.00 / 25.400
C
.028 / 0.700
.031 / 0.800
D
.138 / 3.500
E
.106 / 2.700
.139 / 3.400
F
.039 / 1.000
.047 / 1.200
G
.004 / 0.100
.006 / 0.150
H
.200 / 5.100
.208 / 5.300
ORDER CODE: ASI10674
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 25 mA
BV_CES
I_C = 10 mA
BV_EBO
I_E = 5.0 mA
h_FE
V_CE = 5.0 V
I_C = 150 mA
MINIMUM TYPICAL MAXIMUM
12
28
4.0
20
---
UNITS
V
V
V
---
C_ob
V_CB = 12.5 V
f = 1.0 MHz
4.0
pF
P_G
V_CC = 12.5 V
P_OUT = 0.5 W
f = 470 MHz
13
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1