UHBS60-2_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

UHBS60-2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBS60-2 is Designed for
Class C, FM Base Station Applications
up to 960 MHz.
FEATURES:
• Internal Input Matching Network
• P_G = 7.0 dB at 60 W/960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
9.0 A
V_CBO
50 V
V_CEO
26 V
V_CES
50 V
V_EBO
4.0 V
P_DISS
190 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.9 °C/W
PACKAGE STYLE .230 6L FLG
.040x45° ^C
4X .025 R
A
B
.115
.430 D
E
.125
I
F
G
H
2XØ.130
L
JK
DIM
M IN IM U M
inches / mm
A
.355 / 9.02
B
.115 / 2.92
C
.075 / 1.91
D
.225 / 5.72
E
.090 / 2.29
F
.720 / 18.29
G
.970 / 24.64
H
.355 / 9.02
I
.004 / 0.10
J
.120 / 3.05
K
.160 / 4.06
L
.230 / 5.84
MAXIMUM
inches / mm
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
ORDER CODE: ASI10673
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CES
I_C = 50 mA
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 20 V
I_CBO
V_CB = 30 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
50
50
26
3.0
10
5
20
100
UNITS
V
V
V
V
mA
mA
---
C_ob
V_CB = 24 V
f = 1.0 MHz
75
pF
P_G
V_CE = 24 V
P_OUT = 60 W
η_C
f = 960 GHz
7.0
50
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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