UFT30-28 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

UFT30-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The UFT30-28 is Designed for Class
A and B Power Ampliifiers Operating
up to 500 MHz.
FEATURES:
• P_G = 7.0 dB min. at 25 W/400 MHz
• η_D = 60 % Typical
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_D
5.0 A
V_DDS
65 V
V_GS
P_DISS
T_J
T_STG
θ_JC
±40 V
100 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
1.8 ^OC/W
PACKAGE STYLE .380 4L FLG.
.112 x 45°
B
S
A
D
Ø.125 NOM.
FULL R
J
.125
G
S
C
D
E
F
GH ^I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10666
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
V_DSS
I_DS = 10 mA
I_DSS
V_DS = 28 V
I_GSS
V_GS = 20 V
V_GS
V_DS = 10 V
I_D = 25 mA
G_FS
V_DS = 10 V
I_D = 500 mA
MINIMUM TYPICAL MAXIMUM
60
4.0
1.0
1.0
6.0
500
UNITS
V
mA
µA
V
mMho
C_ISS
46
C_OSS
V_DS = 28 V
V_GS = 0 V
f = 1.0 MHz
33
pF
C_RSS
6.0
P_G
V_DD = 28 V
I_DQ = 25 mA
P_OUT = 25 W
7.0
dB
η_D
f = 400 MHz
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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