TVV100 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVV100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV100 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
16 A
V_CBO
65 V
V_CEO
33 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
3.5 V
150 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.8 ^OC/W
PACKAGE STYLE .400 8L FLG
C
D
B
A
FULL R
G
F
E
.1925
.125
H
I
J
K
O
4 x .060 R
N
LM
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
MINIMUM
inches / mm
.115 / 2.92
.065 / 1.65
.380 / 9.65
.735 / 18.67
.645 / 16.38
.895 / 22.73
.420 / 10.67
.003 / 0.08
.120 / 3.05
.159 / 4.04
.395 / 10.03
.030 / 0.76
.360 / 9.14
.130 / 3.30
MAXIMUM
inches / mm
.125 / 3.18
.075 / 1.91
.390 / 9.91
.765 / 19.43
.655 / 16.64
.905 / 22.99
.430 / 10.92
.007 / 0.18
.130 / 3.30
.175 / 4.45
.280 / 7.11
.405 / 10.29
ORDER CODE: ASI10662
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CER
I_C = 50 mA
R_BE = 15 Ω
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 5.0 mA
h_FE
V_CE = 5.0 V
I_C = 500 mA
C_OB
V_CB = 28 V
f = 1.0 MHz
P_G
V_CE = 28 V
I_C = 2 X 100 mA
P_OUT = 100 W
f = 225 MHz
MINIMUM TYPICAL MAXIMUM
65
60
33
3.5
20
150
---
60
---
11
UNITS
V
V
V
V
---
pF
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1