TVV030A_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVV030A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV030A is Designed for
Television Band III Applications up
to 225 MHz.
FEATURES:
• Common Emitter
• P_G = 7.5 dB at 30 W/225 MHz
• Omnigold™ Metalization System
• Emitter Ballasting
MAXIMUM RATINGS
I_C
14 A
V_CBO
45 V
V_CEO
25 V
V_EBO
4.0 V
P_DISS
146 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.2 °C/W
PACKAGE STYLE .500 4L STUD(A)
A
.112 x 45°
C
Ø .630 NOM
BC ^E
B
E
1/4-28 UNF-2A
E
D
G
F
H
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
C
.545 / 13.84
D
.495 / 12.57
E
.003 / 0.08
F
G
.185 / 4.70
H
.497 / 12.62
MAXIMUM
inches / mm
.230 / 5.84
1.050 / 26.67
.555 / 14.10
.505 / 12.83
.007 / 0.18
.830 / 21.08
.198 / 5.03
.530 / 13.46
ORDER CODE: ASI10661
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CES
I_C = 100 mA
R_BE = 10 Ω
BV_CEO
I_C = 25 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 5.0 V
I_C = 1.0 mA
MINIMUM TYPICAL MAXIMUM
45
25
4.0
10
40
UNITS
V
V
V
---
C_OB
V_CB = 30 V
f = 1.0 MHz
135
pF
P_G
V_CE = 25 V
I_C = 5.0 A
f = 175-225 MHz
6.0
7.0
dB
IMD₁
P_OUT = 30 W
-50
dBc
VSWR
3:1
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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