TVV020_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVV020
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVV020 is Designed for
Television Band III Applications up
to 225 MHz.
FEATURES:
• Common Emitter
• P_G = 8.0 dB at 20 W/225 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
8.0 A
V_CEO
35 V
V_CES
60 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
140 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
1.5 ^OC/W
PACKAGE STYLE .500 4L STUD
A
45°
D
B_S
ØC
D
E
F
S
G
J
SEATING
I PLANE
G
H
#10-32 UNF
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.050 / 26.67
B
.220 / 5.59
.230 / 5.84
C
.495 / 12.57
.505 / 12.83
D
.003 / 0.08
.007 / 0.18
E
.160 / 4.06
.180 / 4.57
F
.622 / 15.80
G
.100 / 2.54
.130 / 3.31
H
.415 / 10.54
.425 / 10.80
I
.720 / 18.29
J
.250 / 6.35
.290 / 7.37
ORDER CODE: ASI10659
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CER
I_C = 50 mA
R_BE = 10 Ω
BV_CEO
I_C = 50 mA
BV_EBO
I_E = 10 mA
I_CES
V_CB = 50 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
C_OB
V_CB = 30 V
f = 1.0 MHz
P_G
IMD₃
V_CE = 25 V
P_OUT = 20 W
I_C = 2.5 A
f = 225 MHz
MINIMUM TYPICAL MAXIMUM
65
60
35
4.0
5.0
20
120
UNITS
V
V
V
V
mA
---
85
pF
8.0
dB
-51
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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