TVU150_07 Datasheet, PDF (1/3 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU150 is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
• Common Emitter
• P_G = 10 dB at 150 W/860 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
25 A
V_CEO
28 V
V_CES
60 V
V_EBO
3.5 V
P_DISS
300 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.55 °C/W
PACKAGE STYLE .400 BAL FLG(D)
A
.080x45°
B
.1925
E
D
C
FULL R
(4X).060 R
M
F
G
H
N
I
L
J
K
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.210 / 5.33
C
.125 / 3.18
D
.380 / 9.65
.390 / 9.91
E
.580 / 14.73
.620 / 15.75
F
.435 / 11.05
G
1.090 / 27.69
1.105 / 28.07
H
1.335 / 33.91
1.345 / 34.16
I
.003 / 0.08
.007 / 0.18
J
.060 / 1.52
.070 / 1.78
K
.100 / 2.54
.115 / 2.92
L
.230 / 5.84
M
.395 / 10.03
.407 / 10.34
N
.850 / 21.59
.870 / 22.10
ORDER CODE: ASI10652
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CER
I_C = 100 mA
R_BE = 200 Ω
BV_CES
I_C = 50 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 30 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
26
30
35
40
60
80
3.5
4.0
10
30
45
120
UNITS
V
V
V
V
mA
---
C_OB
V_CB = 26 V
f = 1.0 MHz
75
pF
P_G
IMD₁
Load
Mismatch
V_CC = 26 V I_CQ = 2 X 3000 mA
P_OUT = 40 W
f = 860 MHz
V_CC = 26 V I_CQ = 2 X 150 mA P_OUT = 150 W PEP
VSWR = 5:1 @ all phase angles
11
9.0
dB
-52
dBc
No Degradation in Output
Power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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