TVU150A_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU150A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU150A is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
• Common Emitter
• P_G = 6.5 dB at 150 W/860 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
25 A
V_CBO
60 V
V_CEO
30 V
V_EBO
3.0 V
P_DISS
310 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
0.55 °C/W
PACKAGE STYLE .450 BAL FLG(B)
A
.120 x 45°
B
FULL R
C
ED
M
.208
.210
I
F
.050 NOM.
G
H
4X.060 R
J KL
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.373 / 9.47
.385 / 9.78
B
.205 / 5.21
C
.120 / 3.25
.130 / 3.30
D
.411 / 10.44
.421 / 10.69
E
.825 / 20.96
.865 / 21.97
F
.525 / 13.34
.535 / 13.59
G
1.255 / 31.88
1.265 / 32.18
H
1.675 / 42.55
1.685 / 42.80
I
.002 / 0.05
.006 / 0.15
J
.095 / 2.41
.105 / 2.67
K
.115 / 2.92
.135 / 3.43
L
.250 / 6.35
M
.445 / 11.30
.457 / 11.61
ORDER CODE: ASI10653
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 100 mA
BV_CEO
I_C = 100 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 28 V
h_FE
V_CE = 5.0 V
I_C = 3.0 A
MINIMUM TYPICAL MAXIMUM
60
30
3.0
10
15
70
UNITS
V
V
V
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
100
pF
P_G
V_CE = 28 V I_C = 2 X 500 mA
P_OUT = 150 W
f = 860 MHz
6.5
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
1/1