TVU150 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU150 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
25 A
V_CEO
28 V
V_CES
60 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
3.5 V
300 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
0.55 ^OC/W
PACKAGE STYLE .400 BAL FLG(C)
.080x45°
A
B
FULL R
(4X).060 R
E
D
C
.1925
I
F
G
H
N
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
.220 / 5.59
.120 / 3.05
.380 / 9.65
.780 / 19.81
1.335 / 33.91
.003 / 0.08
.060 / 1.52
.082 / 2.08
.210 / 5.33
.435 / 11.05
1.090 / 27.69
.395 / 10.03
.850 / 21.59
M
L
JK
MAXIMUM
inches / mm
.230 / 5.84
.130 / 3.30
.390 / 9.91
.820 / 20.83
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.100 / 2.54
.205 / 5.21
.407 / 10.34
.870 / 22.10
ORDER CODE: ASI10652
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 100 mA
BV_CER
I_C = 100 mA
R_BE = 200 Ω
BV_CES
I_C = 50 mA
BV_EBO
I_E = 10 mA
I_CES
V_CE = 30 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
26
30
35
40
60
80
3.5
4.0
10
30
45
120
UNITS
V
V
V
V
mA
---
C_OB
V_CB = 26 V
f = 1.0 MHz
75
pF
P_G
IMD₁
Load
Mismatch
V_CC = 26 V I_CQ = 2 X 3000 mA
P_OUT = 40 W
f = 860 MHz
V_CC = 26 V I_CQ = 2 X 150 mA P_OUT = 150 W PEP
VSWR = 5:1 @ all phase angles
11
9.0
dB
-52
dBc
No Degradation in Output
Power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
1/1