TVU025_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU025
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU025 is a gold metalized
RF power transistor designed for high
linearity Calss-AB operation in UHF
band IV and V TV transmitters.
FEATURES:
• Common Emitter
• P_G = 9.0 dB at 25 W/860 MHz
• Omnigold™ Metalization System
• Internal Input Matching
• 28 V operations
MAXIMUM RATINGS
I_C
8.0 A
V_CBO
45 V
V_CEO
30 V
V_EBO
3.0 V
P_DISS
135 W @ T_C = 25 °C
T_J
-50 °C to +200 °C
T_STG
-50 °C to +150 °C
θ_JC
1.3 °C/W
PACKAGE STYLE .450 BAL FLG(A)
.060x45°
C
E
3
D
F
K
B
A
11
FULL R
.100x45°
3
22
G
H
J
P
MN
L
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.055 / 1.40
B
.120 / 3.05
.130 / 3.30
C
.785 / 19.94
D
.455 / 11.56
.465 / 11.81
E
.120 / 3.05
.130 / 3.30
F
.230 / 5.84
G
.838 / 21.28
.850 / 21.59
H
1.095 / 27.81
1.105 / 28.07
J
.525 / 13.34
.535 / 13.59
K
.002 / 0.05
.005 / 0.15
L
.055 / 1.40
.065 / 1.65
M
.080 . 2.03
.095 / 2.41
N
.195 / 4.95
P
.445 / 11.30
.455 / 11.56
1 = Collector 2 = Base 3 = Emitter
ORDER CODE: ASI10650
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CEO
V_CE = 25 V
h_FE
V_CE = 5.0 V
I_C = 3.0 A
MINIMUM TYPICAL MAXIMUM
45
30
3.0
5.0
10
80
UNITS
V
V
V
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
70
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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