TVU025 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU025
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU 025 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
8.0 A
V_CBO
45 V
V_CEO
30 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
3.0 V
135 W @ T_C = 25 ^OC
-50 ^OC to +200 ^OC
-50 ^OC to +150 ^OC
1.3 ^OC/W
PACKAGE STYLE .450 BAL FLG(A)
.060x45°
C
E
D
F
B
A
FULL R
.100x45°
P
G
H
J
K
N
M
L
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
.055 / 1.40
B
.120 / 3.05
.130 / 3.30
C
.785 / 19.94
D
.455 / 11.56
.465 / 11.81
E
.120 / 3.05
.130 / 3.30
F
.230 / 5.84
G
.838 / 21.28
.850 / 21.59
H
1.095 / 27.81
1.105 / 28.07
J
.525 / 13.34
.535 / 13.59
K
.002 / 0.05
.005 / 0.15
L
.055 / 1.40
.065 / 1.65
M
.080 . 2.03
.095 / 2.41
N
.195 / 4.95
P
.445 / 11.30
.455 / 11.56
ORDER CODE: ASI10650
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 50 mA
BV_CEO
I_C = 200 mA
BV_EBO
I_E = 10 mA
I_CEO
V_CE = 25 V
h_FE
V_CE = 5.0 V
I_C = 3.0 A
MINIMUM TYPICAL MAXIMUM
45
30
3.0
5.0
10
80
UNITS
V
V
V
mA
---
C_OB
V_CB = 28 V
f = 1.0 MHz
70
pF
P_G
IMD₁
V_CE = 25 V
P_OUT = 25 W
I_C = 3.2 A
f = 860 MHz
8.0
-45
dB
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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