TVU020_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU020
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU020 is a common emitter RF
bipolar transistor capable of providing 20 W
peak, Class-A, RF power output over 470-860
MHz. It utilizes emitter ballasting & input
impedance matching to provide broadband
performance.
FEATURES:
• 470-860 MHz
• Common Emitter
• P_G = 8.5 dB at 20 W/860 MHz
• Omnigold™ Metalization System
• InPut bradband matching
MAXIMUM RATINGS
I_C
4.5 A
V_CEO
28 V
V_CES
50 V
V_EBO
4.0 V
P_DISS
80 W @ T_C = 25 °C
T_J
-65°C to +200°C
T_STG
-65 °C to +150 °C
θ_JC
1.2 °C/W
PACKAGE STYLE .400 BAL FLG(A)
A
B
FULL R
4X.060 R
C
E
D
P
FH _G
I
K
J
N
LM
DIM
MINIMUM
inches / mm
A
.210 / 5.33
B
.045 / 1.14
C
.125 / 3.18
D
.380 / 9.65
E
.770 / 19.56
F
.070 / 1.78
G
.215 / 5.46
H
.420 / 10.67
I
.645 / 16.38
J
.895 / 22.73
K
.002 / 0.05
L
.058 / 1.47
M
.115 / 2.92
N
P
.395 / 10.03
MAXIMUM
inches / mm
.230 / 5.84
.055 / 1.40
.135 / 3.43
.390 / 9.91
.830 / 21.08
.080 / 2.03
.235 / 5.97
.430 / 10.92
.655 / 16.64
.905 / 22.99
.006 / 0.15
.065 / 1.65
.130 / 3.30
.230 / 5.84
.405 / 10.29
ORDER CODE: ASI10648
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 40 mA
BV_CES
I_C = 20 mA
BV_EBO
I_E = 10 mA
I_CEO
V_CE = 26.5 V
h_FE
V_CE = 5.0 V
I_C = 1.0 A
MINIMUM TYPICAL MAXIMUM
28
50
4.0
---
5.0
10
150
UNITS
V
V
V
mA
---
P_G
V_CE = 26.5 V
P_OUT = 20 W f = 470-860 MHz
8.5
9.5
dB
IMD₃
I_C = 2 X 1350 Ma P_IN = 2.8 W
-46
-48
-46
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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