TVU014 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU014
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU014 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2 x 2.6 A
V_CBO
45 V
V_CEO
25 V
V_EBO
P_DISS
T_J
T_STG
θ_JC
4.0 V
65 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
2.5 ^OC/W
PACKAGE STYLE .250 BAL FLG
A
B
.020 x 45°
Ø.130 NOM.
.050 x 45°
E
C
D
N
F
J
G
H
I
LM
K
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
.055 / 1.40
.243 / 6.17
.630 / 16.00
.555 / 14.10
.739 / 18.77
.315 / 8.00
.002 / 0.05
.055 / 1.40
.075 1.91
.245 / 6.22
.060 / 1.52
.125 / 3.18
.092 / 2.34
MAXIMUM
inches / mm
.065 / 1.65
.255 / 6.48
.670 / 17.01
.565 / 14.35
.750 / 19.05
.327 / 8.31
.006 / 0.15
.065 / 1.65
.095 / 2.41
.190 / 4.83
.257 / 6.53
ORDER CODE: ASI10647
CHARACTERISTICS TC = 25 ^OC
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 20 mA
BV_CEO
I_C = 40 mA
BV_EBO
I_E = 5.0 mA
h_FE
V_CE = 20 V
I_C = 0.5 A
MINIMUM TYPICAL MAXIMUM
45
25
3.0
10
---
UNITS
V
V
V
---
C_OB
V_CB = 25 V
f = 1.0 MHz
20
pF
P_G
IMD₁
V_CE = 25 V
P_OUT = 14 W
I_C = 2 x 850 mA
f = 860 MHz 8.5
-50
dB
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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