TVU012_07 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU012
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU012 is a common emitter RF
bipolar transistor capable of providing 12 W,
peak, Class-A, RF power output over 470-860
MHz. It utilizes input impedance matching to
provide broadband performance.
FEATURES:
• 470-860 MHz operation
• Input Matching Network
• Common emitter
• Omnigold™ Metalization System
with eutectic die bonding
MAXIMUM RATINGS
I_C
3.5 A
V_CES
45 V
V_CE
28 V
P_DISS
80 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
1.6 °C/W
PACKAGE STYLE .400 8L FLG
G
F
E
.1925
.125
K
C
D
B
A
FULL R
O
H
4 x .060 R
I
J
N
LM
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
M IN IM UM
inches / mm
.115 / 2.92
.065 / 1.65
.380 / 9.65
.735 / 18.67
.645 / 16.38
.895 / 22.73
.420 / 10.67
.003 / 0.08
.120 / 3.05
.159 / 4.04
.395 / 10.03
.030 / 0.76
.360 / 9.14
.130 / 3.30
M A X IM U M
inches / mm
.125 / 3.18
.075 / 1.91
.390 / 9.91
.765 / 19.43
.655 / 16.64
.905 / 22.99
.430 / 10.92
.007 / 0.18
.130 / 3.30
.175 / 4.45
.280 / 7.11
.405 / 10.29
ORDER CODE: ASI10646
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 65 mA
BV_CES
I_C = 25 mA
BV_EBO
I_E = 10 mA
h_FE
V_CE = 5.0 V
I_C = 500 mA
MINIMUM TYPICAL MAXIMUM
28
45
4.0
10
100
UNITS
V
V
V
---
P_G
V_CE = 26.5 V I_C = 2 X 0.85 mA f = 860 MHz
8.9
9.5
dB
IMD₁
P_OUT = 12 W
P_IN = 1.55 W
f = 470-860 MHz
-52
dBc
C_OB
V_CB = 26 V
f = 1.0 MHz
23
pF
VSWR
3:1
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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