TVU005B Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU005B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The TVU005B is a Common Emitter
Device Designed for High Linearity
Class A Band IV and V Television
Transmitters.
FEATURES INCLUDE:
• High Gain - 13 dB min.
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
I_C
300 mA
V_CB
P_DISS
T_J
T _STG
θ _JC
45 V
5.3 W @ T_C = 25 ^OC
-65 ^OC to +200 ^OC
-65 ^OC to +150 ^OC
33 ^OC/W
PACKAGE STYLE .204 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS T_C = 25 ^OC
SYMBOL
TEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CBO
I_C = 10 mA
BV_EBO
I_E = 1.0 mA
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
22
45
3.5
20
200
UNITS
V
V
V
---
C_OB
V_CB = 28 V
f = 1.0 MHz
3.0
pF
P_G
V_CE = 20 V I_C = 150 mA P_ref = 0.5 W f = 860 MHz
13
IMD₃
SOUND = -7.0 dB VISION = -8.0 dB CHROMA = -16 dB
---
---
dB
-58
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are Subject to change without notic.
REV. A
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