TVU0.5_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU0.5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU0.5 is a gold metallized
RF transistor designed for UFH linear
applications for TV bands IV and V. It
utilizes emitter ballasting for high
linearity and ruggedness.
FEATURES:
• Common Emitter
• P_G = 9.5 dB at 0.5 W/ 860 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2.0 A
V_CBO
45 V
V_CEO
25 V
V_EBO
3.5 V
P_DISS
31.8 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
5.5 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
C
BE
E
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10640
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CEO
I_C = 20 mA
BV_EBO
I_E = 0.25 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
C_OB
V_CB = 28 V
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
45
24
3.5
0.45
15
120
5.0
UNITS
V
V
V
mA
---
pF
P_G
V_CE = 20 V
I_C = 220 mA
f = 860 MHz
9.5
IMD₁
P_OUT = 0.5 W
P_IN = 50 mW
Conditions: f₁ = 860 MHz (-8 dBc), f₂ = 863.5 MHz (-16 dBc), f₃ = 864-5 MHz (-7 dBc)
dB
-58
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. C
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