TVU0.5A_07 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TVU0.5A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TVU0.5A is Designed for
Television Band IV & V Applications
up to 860 MHz.
FEATURES:
• Common Emitter
• P_G = 9.5 dB at 0.5 W/860 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I_C
2.0 A
V_CBO
45 V
V_CEO
25 V
V_EBO
3.5 V
P_DISS
31.8 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +150 °C
θ_JC
33 °C/W
PACKAGE STYLE .205 4L STUD
D
A
C
B
G
E
H
F
#8-32UNC
J
DIM
A
B
C
D
E
F
G
H
I
J
M IN IM U M
inches / mm
.976 / 24.800
.976 / 24.800
.028 / 0.700
.161 / 4.100
.098 / 2.500
.200 / 5.100
.004 / 0.100
.425 / 10.800
.200 / 5.100
.138 / 3.500
M A X IM U M
inches / mm
1.000 / 25.4000
1.000 / 25.4000
.031 / 0.800
.196 / 5.000
.110 / 2.800
.208 / 5.300
.006 / 0.150
.465 / 11.800
2.05 / 5.200
ORDER CODE: ASI10641
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CBO
I_C = 1.0 mA
BV_CEO
I_C = 20 mA
BV_EBO
I_E = 0.25 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
45
24
3.5
0.45
15
120
UNITS
V
V
V
mA
---
P_G
IMD₁
V_CE = 20 V
P_OUT = 0.5 W
I_C = 150 mA
f = 860 MHz
9.5
-58
dB
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. B
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