TRW54601 Datasheet, PDF (1/1 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

TRW54601
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TRW54601 is Designed for
General Purpose Oscillator
Applications up to 2.3 GHz.
FEATURES:
• Diffused Ballast Resistors
• Omnigold™ Metalization System
• Common Emitter
MAXIMUM RATINGS
I_C
400 mA
V_CES
50 V
P_DISS
3.0 W @ T_C = 25 °C
T_J
-65 °C to +200 °C
T_STG
-65 °C to +200 °C
θ_JC
35 °C/W
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = EMITTER 3 = BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BV_CEO
I_C = 10 mA
BV_CES
I_C = 10 mA
BV_EBO
I_E = 1.0 mA
I_CBO
V_CB = 28 V
h_FE
V_CE = 5.0 V
I_C = 100 mA
MINIMUM TYPICAL MAXIMUM
22
50
3.5
0.5
20
UNITS
V
V
V
mA
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C_OB
P_G
VSRW
V_CB = 28 V
V_CE = 20 V
P_OUT = 0.5 W
I_C = 120 mA
f = 1.0 MHz
f = 2.3 GHz
8.5
2.4
3.0
pF
9.5
dB
30:0
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone]
Specifications are subject to change without notice.
REV. A
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